AVS 62nd International Symposium & Exhibition
    Scanning Probe Microscopy Focus Topic Friday Sessions
       Session SP+AS+MI+NS+SS-FrM

Paper SP+AS+MI+NS+SS-FrM6
Utilizing Ballistic Electron Emission Microscopy to Study Sidewall Scattering of Electrons

Friday, October 23, 2015, 10:00 am, Room 212A

Session: Probe-Sample Interactions
Presenter: Westly Nolting, College of Nanoscale Science and Engineering, University of Albany
Authors: W. Nolting, College of Nanoscale Science and Engineering, University of Albany
C. Durcan, College of Nanoscale Science and Engineering, University of Albany
R. Balsano, College of Nanoscale Science and Engineering, University of Albany
V. LaBella, College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
Correspondent: Click to Email
Sidewall scattering of electrons within aggressively scaled metallic interconnects increases the resistance since the mean free path (~40 nm) is larger than the dimensions of the material. One method to study hot-electron scattering in nm-thick metallic films is Ballistic Electron Emission Microscopy (BEEM), which is an STM based technique. In this work, we perform BEEM scattering measurements on lithographically patterned fin structures with a Schottky diode interface to determine its ability to measure sidewall scattering. This is accomplished by acquiring BEEM spectra on a regularly spaced grid and fitting the results to determine both the Schottky barrier height and the slope of the spectra. The slope of the spectra is related to the scattering in the film and interface. The position of fin structures are then determined by mapping both the Schottky height and slope over a square micron to observe scattering at the interface caused by the patterned structures. The poster will discuss the fabrication of the patterned 50-nm-pitched sidewall structures that are used for mapping the sidewall scattering. In addition, it will present the preliminary BEEM measurements on these structures.