| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Monday Sessions |
| Session PS-MoM |
| Session: | Advanced FEOL/Gate Etching |
| Presenter: | John Sporre, IBM Corporation |
| Authors: | J.R. Sporre, IBM Corporation A. Raley, TEL Technology Center, America, LLC D. Moreau, STMicroelectronics M. Sankarapandian, IBM Corporation P.K.C. Sripadarao, IBM Corporation J. Fullam, IBM Corporation M. Breton, IBM Corporation R. Chao, IBM Corporation S. Kanakasabapathy, IBM Corporation A. Ko, TEL Technology Center, America, LLC |
| Correspondent: | Click to Email |
Sub-Lithographic pitch patterning requires advanced patterning techniques capable of achieving reduced dimensions with current lithography technology. Novel techniques are employed to pattern gates with critical dimensions below the current resolution limits of optical lithography. One such technique is Sidewall Image Transfer (SIT), where the critical dimension of the gate is established by the controlled deposition of a spacer on top of a Lithographically defined mandrel. The material selection of the mandrel and spacer materials can influence the functionality of the SIT process, and this paper specifically compares the use of an ashable organic mandrel to an inorganic mandrel. Organic mandrels for mandrel removal selective surrounding spacer material. However inorganic mandrels, are resistant to profile modifications. In this paper, we compare both approaches with specific focus on the influence of plasma etch chemistries on mandrel profile characteristics.