AVS 62nd International Symposium & Exhibition | |
Plasma Science and Technology | Monday Sessions |
Session PS+SE-MoM |
Session: | Atmospheric Pressure Plasma Processing I |
Presenter: | Floran Peeters, FOM Institute DIFFER, Netherlands |
Authors: | F.J.J. Peeters, FOM Institute DIFFER, Netherlands R.F. Rumphorst, Eindhoven University of Technology, Netherlands M.C.M. van de Sanden, FOM Institute DIFFER, Netherlands |
Correspondent: | Click to Email |
In plasma devices, the surfaces bounding the plasma form an integral part of the system. Despite this, surfaces are generally described as perfect absorbers for electrons and ions, without any further consideration of potentially relevant processes taking place within the material. Dielectric surfaces, for instance, are treated as single capacitive elements, providing a wall potential. For most discharges this model is sufficiently accurate, but if the characteristic dimensions of dielectric and plasma are very dissimilar, such as in etched micro- and nanostructures or if the discharge itself is non-uniform, understanding the build-up of surface charges and their subsequent behavior becomes of paramount importance.
In our work, we use a typical non-uniform discharge to investigate the plasma-dielectric interaction: the dielectric barrier discharge (DBD) in filamentary mode. Filamentary DBDs can be described by an equivalent circuit which assumes discharging occurs uniformly across the surface, i.e. by treating the dielectric as a single continuous capacitive element. This is counter-intuitive, since DBD actually consists of many spatially and temporally separated, transient microdischarges. Studying the electrical characteristics of DBDs more closely, using both conventional Q-V diagrams combined with a circuit designed to record the transferred charge per filament, we developed an improved electrical model of the DBD. An extension to the electrical model for DBDs introduced by Manley in 1943, our model explicitly takes into account the localized nature of the discharge. Using this model, we find that individual filaments are always roughly equivalent; irrespective of the phase or amplitude of the applied voltage. We show that this leads to limited control over the chemical processing efficiency of DBD. The fundamental cause of the insensitivity of the discharge to the applied voltage is identified as the constant redistribution of surface charge on the dielectric.
Further investigation reveals that this redistribution of charge does not occur via the gas-phase of the residual plasma, as is often assumed, but is likely the result of excess charge carriers being introduced into the dielectric by the discharge. We provide corroborative evidence that these excess charge carriers, involving free electron and hole densities not normally seen in high-band gap materials, provide a boost to the conductivity of the material in locations affected by the plasma. As shown here for a DBD, this plasma-induced conductivity can have a significant effect on the behavior of the discharge and should be considered in any models of plasma involving dielectric surfaces.