AVS 62nd International Symposium & Exhibition | |
Plasma Science and Technology | Monday Sessions |
Session PS+EM-MoA |
Session: | Directed Self Assembly and Plasma Synthesis of Novel Materials |
Presenter: | Sean Paradiso, University of California at Santa Barbara |
Authors: | G.H. Fredrickson, University of California at Santa Barbara S. Paradiso, University of California at Santa Barbara |
Correspondent: | Click to Email |
This presentation will provide a tutorial on the physics of bulk block copolymer self-assembly, explaining how molecular parameters such as polymer architecture, composition, and molecular weight influence the size and symmetry of nanoscale domains. In thin films, additional variables such as surface and substrate interactions and substrate topology are important in “directing” the self-assembly and thereby achieving morphologies and features useful for pattern transfer in lithography. A powerful computational framework based on polymer field theory will be described that enables simulations to be conducted for a wide range of block copolymer formulations subject to arbitrary topological confinement (“grapho-epitaxy”) or substrate chemical modulation (“chemo-epitaxy”). Our recent work at UCSB has involved computational studies of block copolymer directed self-assembly (DSA) in a variety of confining templates that can be produced using conventional lithography tools and targeting both line/space patterns and vertical interconnects (VIAs). The research aims to identify polymer architectures and compositions along with template geometries and surface treatments that lead to robust DSA structures. Beyond process windows for perfect structures, we have studied defect states and the free energy landscape connecting them to perfect states, thereby providing estimates of equilibrium defect populations and kinetic barriers for defect annealing. I will finish the presentation with an example of an “inverse design” calculation, namely the identification of a template and polymer composition that optimally produces a desired self-assembled pattern. Further developments in this area will be necessary for DSA to become a practical tool in next generation lithography.