AVS 62nd International Symposium & Exhibition
    Materials Characterization in the Semiconductor Industry Focus Topic Tuesday Sessions
       Session MC-TuP

Paper MC-TuP3
Characterization of the Doped Amorphous Carbon Hardmask Film Prepared by Hybrid Plasma CVD Systems

Tuesday, October 20, 2015, 6:30 pm, Room Hall 3

Session: Materials Characterization in the Semiconductor Industry Poster Session (All areas)
Presenter: Jaeyoung Yang, TES Co. Ltd., Republic of Korea
Authors: J.Y. Yang, TES Co. Ltd., Republic of Korea
K.P. Park, TES Co. Ltd., Republic of Korea
G.H. Hur, TES Co. Ltd., Republic of Korea
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We investigated the single and laminated stacked doped amorphous carbon film with additive gas as boron and nitrogen, and so on. The film properties was characterized by XPS, SIMS, and FT-IR spectroscope. Boron doped carbon film with B concentration-had > 30 % had the highest selectivity to oxide of over 10:1. In this study we had a choice of hybrid plasma chemical vapor deposition (CVD), and it was very stable plasma condition for a long time process and the specified laminated stacked carbon hardmask films were consisted with nitrogen and boron. We considered our optimised doped carbon films can be applied to use as the hardmask for designing about photolithograph and etching process. We can be easily controlled to dopant ratio by the plasma deposition system with the pulsed source feed-through module. Our new hardmask material prepared by hybrid plasma CVD process will be candidate on future material for advanced logic and memories, including DRAM and 3D VNAND chip integration process. We introduced the several behavior of deposited film' properties with varying the deposition parameters into the hybrid plasma CVD systems.