| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | Wei-Chun Chen, National Applied Research Laboratories, Taiwan, Republic of China |
| Authors: | W.C. Chen, National Applied Research Laboratories, Taiwan, Republic of China S.Y. Kuo, Chang Gung University, Taiwan, Republic of China F.I. Lai, Yuan-Ze University, Taiwan, Republic of China Y.C. Lee, Chung Yuan Christian University, Taiwan, Republic of China C.N. Hsiao, National Applied Research Laboratories, Taiwan, Republic of China |
| Correspondent: | Click to Email |
In this article, we investigated selective area growth of InN materials on sapphire substrate using molybdenum mask patterned with various growth temperature. The surface morphology, structural and optical properties of InN materials were analyses by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffractiometer and photoluminescence, respectively. XRD results indicated that the InN materials exhibited preferred orientation along the <0001> direction at 550 oC. Surface morphology shows that the InN crystals were grown on Mo-patterned substrate with hexagonal micro-rods array surface texturing. TEM images show these InN films are single phase wurtzite crystals with preferred orientation along the c axis. Optical properties showed the peaks of near band-edge emission at energies between 0.72 - 0.9 eV.