AVS 62nd International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP1
Ionic Liquid Gated Electric Double Layer Transistors based on a-IGZO Thin Films

Tuesday, October 20, 2015, 6:30 pm, Room Hall 3

Session: Electronic Materials and Processing Poster Session
Presenter: PushpaRaj Pudasaini, The University of Tennessee Knoxville
Authors: P.R. Pudasaini, The University of Tennessee Knoxville
J.H. Noh, The University of Tennessee Knoxville
A. Wong, The University of Tennessee Knoxville
A.V. Haglund, The University of Tennessee Knoxville
S. Dai, Oak Ridge National Laboratory
T.Z. Ward, Oak Ridge National Laboratory
D. Mandrus, University of Tennessee, Knoxville and Oak Ridge National Laboratory
P.D. Rack, The University of Tennessee Knoxville
Correspondent: Click to Email
The electric filed effect with the field effect transistor configuration is a powerful approach for externally tuning the carrier density of a material and investigating associated changes in the electronic properties of the material. To this end, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Herein, we report ionic liquid (IL) gated field effect transistor based on amorphous Indium Gallium Zinc Oxide (IGZO) thin film active layers. The transport measurement of the IL revealed the intrinsic n-channel property of the IGZO thin film with high ON/OFF ratio ~105 and a large field effect electron mobility of 5.38 cm2V-1S-1 at 300K and a threshold voltage of 0.1V. Comparable measurements on the bottom SiO2 gate insulator revealed an ON/OFF ratio ~109 and field effect electron mobility of 12.53 cm2V-1S-1 and a threshold voltage of 2.5V. Furthermore, we found that the ionic liquid gating of a-IGZO thin film leads to not only an electrostatically induced carrier accumulation but also the field induced creation of O2 vacancy, with constituent migration of oxygen in and out of the film depending on the polarity of the bias used. This could leads to the bias induced control of carrier density in an amorphous oxide semiconductors.