Invited Paper EM+NS+PS-MoM8
2D Bipolar Devices for Novel Logic Applications: Fabrication, Characterization and Applications

Monday, October 19, 2015, 10:40 am, Room 210E

The three pillars in semiconductor device technologies are (1) the p-n diode, (2) the MOSFET and (3) the Bipolar Junction Transistor (BJT). They have enabled the unprecedented growth in information technology that see today. For any new material, therefore, the development of these three devices is critical for providing benchmark performance against highly scaled Si-based technologies. Here, we will describe our efforts to fabricate and characterize these three benchmark devices in 2D materials, including graphene and transition metal dichalcogenide semiconductors (TMDs).

Although graphene is gapless, we will describe device concepts based on graphene p-n junctions that can lead to steep subthreshold slope devices. Critical to realizing such devices is the demonstration of relativistic Klein tunneling, a property of chiral carriers that arise from the unique electronic structure of graphene. Here, we will describe the fabrication and characterization of graphene p-n junctions, and discuss the unique tunneling properties that arise in these junctions and our efforts to realize high efficiency switching devices.

Using TMD materials, we have fabricated a single device that can reconfigure into p-n, MOSFET, and BJT devices. The reconfigurable device allows us to provide fundamental linkages between material properties and device performance not possible by fabricating the three devices individually. We will provide our method of fabrication and describe electrical and optical properties of the reconfigurable device.