AVS 61st International Symposium & Exhibition
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP5
Simulation and Diagnostic Study on the Large Area Magnetized Inductively Coupled Ar/O2/CF4 Plasma

Tuesday, November 11, 2014, 6:30 pm, Room Hall D

Session: Plasma Science and Technology Poster Session
Presenter: Ho-Jun Lee, Pusan National University, Republic of Korea
Authors: H.-J. Lee, Pusan National University, Republic of Korea
E.-J. Son, Pusan National University, Republic of Korea
Y.-G. Kim, Pusan National University, Republic of Korea
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Scaling up of inductively coupled plasma (ICP) and capacitively couple plasma (CCP) is important and urgent task for future 450 mm semiconductor wafer processing. A weakly magnetized inductively coupled plasma (MICP) have been introduced as an effort to improve efficiency, stability of low pressure operation and density uniformity of ICP. MICP is a source utilizing cavity mode of low frequency branch of right hand circularly polarized wave.(1) In the previous study, results on the simulation and optical multi-port diagnostics of Ar MICP have been presented.(2) In this study we present simulation and experimental results on the properties of ICP and MICP with Ar/CF4, Ar/O2/CF4 chemistry. Flow field calculation of feed gas was included in the self-consistent plasma simulation. Electron density and energy was measured with tuned langmuir probes. Spatially resolved emission spectra were taken with a home-made, wafer type multi-channel optical emission measurement system. In 5 mtorr, Ar/CF4(5~20%) discharge condition, electron density uniformity of MICP was improved about factor of two compared with that of ICP. Electron density of MICP in Ar/CF4 discharge was increased by 40 % due to improved power transfer efficient. However electron temperature became more non-uniform in MICP. Simulation results showed that density distribution of neutral species such as CF, CF2, CF3 were primarily affected by flow field. Highest density was observed on the top of electrode where the flow velocity was lowest.