AVS 61st International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS+HI-TuM

Paper NS+HI-TuM11
Prospects for Nanofabrication using the Combination of STM-based Depassivation Lithography, Selective ALD, and Material Etch Processes

Tuesday, November 11, 2014, 11:20 am, Room 304

Session: Nanopatterning and Nanolithography 
Presenter: Joshua Ballard, Zyvex Labs
Authors: J. Ballard, Zyvex Labs
S. Anz, Systine, Inc.
S. Sando, Systine, Inc.
M. Bischof, University of North Texas
D. Dick, University of Texas at Dallas
J. Fu, National Institute of Standards and Technology (NIST)
D. Jaeger, University of North Texas
R. Longo, University of Texas at Dallas
J. Owen, Zyvex Labs
E. Fuchs, Zyvex Labs
S. McDonnell, University of Texas at Dallas
R. Reidy, University of North Texas
Y.J. Chabal, University of Texas at Dallas
R.M. Wallace, University of Texas at Dallas
J. Randall, Zyvex Labs
A. Cherala, University of Texas at Austin
S. Singhal, University of Texas at Austin
S. Sreenivasan, University of Texas at Austin
Correspondent: Click to Email

Attaining the capability to produce top-down designed nanostructures at sizes and precisions at the nanometer and atomic scales will enable new classes of research into material and device behavior. First demonstrated in the mid-1990s, Scanning Tunneling Microscopy (STM) based hydrogen depassivation lithography has been shown to allow selective functionalization of surfaces with many types of molecules and materials with near absolute precision. Recently, selective Atomic Layer Deposition (ALD) of titania has also been demonstrated on such a functionalized surface, with the deposited material behaving as an etch mask in 3-D nanostructure formation. This results in a process that combines the high precision of STM with standard processing techniques to produce 3-D structures.

Already, 3-D structures with arbitrary shapes with full-pitches down to 13 nm have been fabricated using this process. This work will describe this process as well as provide an overview of the problems that need to be addressed to further reduce the minimum feature size and improve precision. Given the current and near term limitations of the process, classes of devices that have been and are possible to be fabricated will be described, including designed quantum dots, photonic structures, and NEMS apparatuses. Finally, pathways for scalability will be discussed.