AVS 61st International Symposium & Exhibition
    Manufacturing Science and Technology Thursday Sessions
       Session MS-ThP

Paper MS-ThP5
Double Patterning Critical Open of Dual Damascene Approach for 14nm Node Beyond

Thursday, November 13, 2014, 6:00 pm, Room Hall D

Session: Manufacturing Science and Technology Poster Session
Presenter: ShihChun Tsai, United Microelectronics Corporation, Taiwan, Republic of China
Correspondent: Click to Email

Double patterning lithography (DPL)

technologies have become a must for 32nm

nodes below. Currently have 2 approaches for DPL:

Self-aligned double patterning(SADP) and litho

etch litho etch(LELE).In this paper, we focus on

LELE induce issue, and present an etching solution

to solve this critical VIA open issue.