| AVS 61st International Symposium & Exhibition | |
| Materials Characterization in the Semiconductor Industry Focus Topic | Tuesday Sessions |
| Session MC-TuP |
| Session: | Poster Session for all areas of Materials Characterization in the Semiconductor Industry |
| Presenter: | Avyaya Jayanthinarasimham, SUNY Albany |
| Authors: | A. Jayanthinarasimham, SUNY Albany M. Medikonda, SUNY Albany A. Matsubayashi, SUNY Albany A.C. Diebold, SUNY Albany R. Matyi, SUNY Albany V.P. LaBella, SUNY Albany P. Khare, College of Nanoscale Science and Engineering H. Chong, College of Nanoscale Science and Engineering |
| Correspondent: | Click to Email |
The giant spin Hall effect (GSHE) is caused by spin orbit interactions in a semiconductor [1] or metal [2] that result in a spin current that is transverse to charge current. Recent spin Hall effect studies in the beta phase of metals such as Ta and W produce transverse spin currents strong enough to switch an adjacent magnetic layer [3]
The metastable β-W is known to exhibit giant spin Hall effect [8]. Deposition conditions selective to β phase of W need to be understood for the large scale fabrication of devices that utilize GSHE. The growth of α and β phases of Tungsten are strongly governed by thickness [4], base pressure [5] and oxygen availability [6] [7]..
This poster will present our work on fabricating and characterizing tungsten films, dominated by the β-phase over a large thickness range by adjusting the oxygen content during the growth. Resistivity measurements as well as x-ray photoelectron spectroscopy and x-ray analysis are performed to determine the phase of the tungsten films.
Reference:
[1] Dyakonov, M.I.Perel, V.I.: Phys. Lett. A 35, 459 (1971)
[2] J.E. Hirsch, arXiv:cond-mat/9906160
[3] Luaiao Liu et al. Science 336, 555 (2012)
[4] D. Choi, et al. J. Vac Sci. Technol.A 29, 051512 9 (2011)
[5] S.M. Rossnagel et al. J.Vac. Sci. Technol. B20, 2047 (2002)
[6] S.Basavaiah Appl. Phys. Lett. 12, 259 (1968)
[7] T. Karabacak et al. Thin Solid Films 493 (2005) 293-293
[8] C.F.Pai et al. [http://arxiv.org/abs/1208.1711]