| AVS 61st International Symposium & Exhibition | |
| Helium Ion Microscopy Focus Topic | Thursday Sessions |
| Session HI+2D+AS+MC-ThA |
| Session: | Nanoengineering with Helium Ion Beams |
| Presenter: | Rajendra Timilsina, The University of Tennessee Knoxville |
| Authors: | R. Timilsina, The University of Tennessee Knoxville P.D. Rack, The University of Tennessee Knoxville S. Tan, Intel Corporation R.H. Livengood, Intel Corporation |
| Correspondent: | Click to Email |
A Monte Carlo simulation has been developed to model the physical sputtering and nanoscale morphology evolution to emulate nanomachining with the Gas Field Ion Microscope. In this presentation, we will present experimental and simulation results of copper vias milled by a focused neon ion beam. Neon beams with a beam energy of 20 keV and a Gaussian beam profile with full-width-at-half-maximum of 1 nm were simulated to elucidate the nanostructure evolution during the physical sputtering of high aspect ratio features. In this presentation we will overview our simulation attributes which includes an evolving real-time sputtered via profile considering both thesputtered and re-deposited material. The sputter yield and sputter profile vary with the ion species and beam parameters and are related to the distribution of the nuclear energy loss in the material. We will also illustrate how the effective sputter yield is aspect-ratio dependent due to the change in the effective escape angle of the sputtered species. Quantitative information such as the sputtering yields, dose dependent aspect ratios and resolution-limiting effects will be discussed. Furthermore, we will show that the calculated nuclear energy loss and implant concentration ahead of the sputtering front correlates to observed damage revealed by transmission electron microscopy.