AVS 61st International Symposium & Exhibition
    Spectroscopic Ellipsometry Focus Topic Thursday Sessions
       Session EL+AS+EM+EN+SS-ThM

Paper EL+AS+EM+EN+SS-ThM4
Real-Time and Through-the-Glass Mapping Spectroscopic Ellipsometry for Analysis and Optimization of CdS:O Window Layers of CdTe Superstrate Solar Cells

Thursday, November 13, 2014, 9:00 am, Room 304

Session: Spectroscopic Ellipsometry for Photovoltaics and Instrument Development
Presenter: Xinxuan Tan, University of Toledo
Authors: X. Tan, University of Toledo
R.W. Collins, University of toledo
P. Koirala, University of Toledo
J. Li, University of Toledo
N.J. Podraza, University of toledo
Correspondent: Click to Email

In-situ real-time spectroscopic ellipsometry (RT-SE) has been applied for the analysis of CdS:O films sputter deposited on c‑Si substrates from a CdS target using different flow ratios of O2/(Ar+O2) from 0 to 0.05. RT-SE studies of the CdS:O layers from the film side provide the complex dielectric function spectra of each the layers over a spectral range of 0.75 to 6.5 eV and its dependence on oxygen content in the material as deduced by energy dispersive X-ray spectroscopy (EDS). Ex-situ infrared ellipsometry of these samples enables extension of the dielectric function data to ~ 0.04 eV and provides information on free carrier conduction and chemical bonding in the material. In similar RT-SE studies, data acquired during the growth of CdS:O/CdTe layers on transparent conducting oxide (TCO) coated glass superstrates have been analyzed to determine the structural evolution of the layers in the configuration used for CdTe solar cells, with the CdS:O serving as an n-type window layer for the p-type CdTe absorber. The results of this analysis assist in the development of a realistic optical model for the multilayer structure of the solar cell. Using this optical model ex-situ through-the-glass spectroscopic ellipsometry (TG-SE) has been implemented toward the analysis of glass/(TCO-stack)/CdS:O/CdTe solar cells in the superstrate configuration.

For the solar cells, CdS:O layers with different oxygen contents were deposited on 15 cm x 15 cm TCO coated glass superstrates . A 16 x 16 array of dot cells each with an area of 0.125 cm2 was fabricated on the superstrate in order to optimize efficiency improvements through combinatorial methods. Because the as-deposited superstrate/film-structure undergoes additional processing steps during device fabrication, three sets of TG-SE mapping data were acquired on (i) as-deposited, (ii) CdCl2-treated (an activation step), and (iii) back-contact coated device structures. With an optical database that has been established for both as-deposited and CdCl2 treated CdS:O, CdTe, and back contact materials, each of the TG-SE mapping data sets were analyzed based on an optical model deduced from RT-SE studies of the CdS:O and CdS:O/CdTe depositions. Thickness and compositional non-uniformity observed over the area by mapped by TG-SE enables correlations between solar cell performance and basic property parameters of the component layers including layer thicknesses and compositions. The resulting correlations provide a pathway to expedite solar cell optimization.