| AVS 61st International Symposium & Exhibition | |
| Applied Surface Science | Thursday Sessions |
| Session AS-ThP |
| Session: | Applied Surface Science Poster Session |
| Presenter: | Michael Brumbach, Sandia National Laboratories |
| Authors: | M. Brumbach, Sandia National Laboratories A. Allerman, Sandia National Laboratories D. Wheeler, Sandia National Laboratories S. Atcitty, Sandia National Laboratories J. Ihlefeld, Sandia National Laboratories |
| Correspondent: | Click to Email |
Preparation of high quality gate oxides on wide bandgap semiconductors is a challenge for realizing efficient high performance devices. For GaN electronics there are a limited number of compatible oxides that have a sufficiently large bandgap to minimize electrical leakage. In this work, reactive molecular beam epitaxy was used to deposit rare earth oxides, Gd2O3 and La2O3, on GaN substrates. For Gd2O3, the valence band offset was tuned by altering the composition of the AlxGa1-xN substrate. Thin films were characterized using reflection high-energy electron and X-ray diffraction and valence band offsets were determined via X-ray photoelectron spectroscopy.
Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-AC04-94AL85000.