AVS 61st International Symposium & Exhibition
    Atom Probe Tomography Focus Topic Thursday Sessions
       Session AP+AS+MC+NS+SS-ThM

Invited Paper AP+AS+MC+NS+SS-ThM10
Atom Probe Tomography and Field Evaporation of Insulators and Semiconductors: Theoretical Issues

Thursday, November 13, 2014, 11:00 am, Room 301

Session: APT Analysis of Semiconductors, Magnetic and Oxide Materials
Presenter: Hans Kreuzer, Dalhousie University, Canada
Correspondent: Click to Email
After reviewing the physics and chemistry in high electrostatic fields and summarizing the theoretical results for Atom Probe Tomography of metallic tips, we turn to the new challenges associated with insulators and semiconductors with regard to local fields inside and on the surface of such materials. The recent (theoretical) discovery that in high fields the band gap in these materials is drastically reduced to the point where at the evaporation field strength it vanishes will be crucial in our discussion.