AVS 60th International Symposium and Exhibition, Session EM+MI+NS+SS+TF-TuA

AVS 60th International Symposium and Exhibition
Electronic Materials and Processing	Tuesday Sessions

Session EM+MI+NS+SS+TF-TuA
High-k Oxides for MOSFETs and Memory Devices II/Oxides and Dielectrics for Novel Devices and Ultra-dense Memory I

Click a paper to see the details. Presenters are shown in bold type.

2:00pm	EM+MI+NS+SS+TF-TuA1 Metal-Atom Dimer Model of Oxygen Vacancy Behaviour in Oxide RRAM J. Robertson, Cambridge University, UK
2:20pm	EM+MI+NS+SS+TF-TuA2 Investigation of Sub-Gap Defect States in High-k Dielectric Materials Using Reflection Electron Energy Loss Spectroscopy B. French, S.W. King, Intel Corporation
2:40pm	EM+MI+NS+SS+TF-TuA3 Invited Paper Atomistic Mechanism of RRAM Operations G. Bersuker, SEMATECH
4:00pm	EM+MI+NS+SS+TF-TuA7 Invited Paper Bipolar Selector Devices for Cross-point ReRAM H.S. Hwang, POSTECH, Republic of Korea
4:40pm	EM+MI+NS+SS+TF-TuA9 Crystallization study of SrTiO₃ Thin Films Prepared on Si₃N₄, Al₂O₃ and Pt surfaces by Plasma-Assisted ALD V. Longo, M.A. Verheijen, F. Roozeboom, W.M.M. Kessels, Eindhoven University of Technology, Netherlands
5:00pm	EM+MI+NS+SS+TF-TuA10 Superconformal Coating and Filling by Two-molecule CVD W. Wang, N. Chang, T. Hitt, G.S. Girolami, J.R. Abelson, University of Illinois at Urbana Champaign
5:20pm	EM+MI+NS+SS+TF-TuA11 Invited Paper Resistive Switching Random Access Memory (RRAM) - Materials, Device, Scaling, and Array Design Y. Wu, S. Yu, H.-Y. Chen, J. Liang, Z. Jiang, H-.S.P. Wong, Stanford University