| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThA |
| Session: | Low Damage Processing |
| Presenter: | Y. Kikuchi, Tohoku University and Tokyo Electron, Japan |
| Authors: | Y. Kikuchi, Tohoku University and Tokyo Electron, Japan S. Samukawa, Tohoku University, Japan |
| Correspondent: | Click to Email |
Conductive carbon material such as graphite film is one of the primary materials used as an alternative for metal electrodes in various devices. However, it is difficult to precisely control their properties at low temperature depositions using conventional plasma-enhanced chemical vapor deposition (PECVD). We have developed a neutral-beam-enhanced chemical vapor deposition (NBECVD) process as an alternative to the conventional PECVD process for forming conductive carbon film to solve this problem. NBECVD can almost completely eliminate the irradiation of UV photons and electrons on the substrate surface by using a carbon aperture, resulting in a damage-free deposition process. Moreover, the NBECVD can form a film through the surface polymerization caused by the bombardment of an energy-controlled Ar neutral beam on a surface with absorbed precursors. We previously proposed controlling the molecular-level structures in SiOCH film by using the NBECVD process, which can control the film properties (k-value and modulus). Since the bombardment energy of the neutral beam can be precisely controlled, selective dissociation of the weak chemical bonds in the precursors is possible, which enables us to control the precursor structure when designing the film structure.
In this study, we used toluene as the precursor to grow an aromatic hydrocarbon structure in the film to obtain the conductive properties. As a result, we formed highly conductive carbon films using a low temperature process.