| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Monday Sessions |
| Session PS-MoM |
| Session: | Innovative Chemistries for Advanced Etch Processes |
| Presenter: | S.U. Engelmann, IBM T.J. Watson Research Center |
| Authors: | S.U. Engelmann, IBM T.J. Watson Research Center E.A. Joseph, IBM T.J. Watson Research Center R.L. Bruce, IBM T.J. Watson Research Center H. Miyazoe, IBM T.J. Watson Research Center W.S. Graham, IBM T.J. Watson Research Center E.M. Sikorski, IBM T.J. Watson Research Center M. Nakamura, Zeon Chemicals LP T. Suzuki, Zeon Chemicals LP H. Matsumoto, Zeon Corporation A. Itou, Zeon Corporation T. Suzuki, Zeon Corporation |
| Correspondent: | Click to Email |
Improving patterning processes is a very crucial element of advancing microelectronics manufacturing processes. Deformation of organic soft masks is a very commonly observed phenomenon. Other issues include extensive plasma damage or mask retention for post-lithography solutions. [1]
Our team has recently introduced a new etch gas which is able to etch by selective deposition of a fluorocarbon layer, [2] analogue to the well established oxide etch mechanism commonly used in manufacturing. [3] Selective deposition was achieved by redesigning the FC etch gas, where reaction with a nitride substrate layer reduces the FC film thickness compared to silicon or oxide substrates. This mechanism was most prominently applied to the spacer module, where high selectivities to oxide and silicon substrates is required. In contrast to conventional spacer processes, an excellent resistance to PR materials opened the processing capabilities for this new gas tremendously.
We will demonstrate how this new gas can be used in patterning solutions, where a high degree of accuracy is needed. The wiggling performance of the new gas will be discussed, as well as direct patterning and/or trilayer patterning using the new gas. Lastly, we also evaluated the new gas for applications beyond optical lithography.
[1] S. Engelmann et al., Proc. SPIE 8328-9
[2] S. Engelmann et al., AVS 58th Int. Symp. & Exhibit. (2011)
[3] M. Schaepkens et al., J. Vac. Sci. Technol. A 17, 26 (1999)