| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | J.A.L Luna, Benemérita Universidad Autónoma de Puebla, Mexico |
| Authors: | J.A.L Luna, Benemérita Universidad Autónoma de Puebla, Mexico M. Meneses, Benemérita Universidad Autónoma de Puebla, Mexico J. Carrillo, Benemérita Universidad Autónoma de Puebla, Mexico F. Flores, Benemérita Universidad Autónoma de Puebla, Mexico A. Morales, Benemérita Universidad Autónoma de Puebla, Mexico J. Martínez, Benemérita Universidad Autónoma de Puebla, Mexico J. Sosa, Benemérita Universidad Autónoma de Puebla, Mexico E. Gómez, Benemérita Universidad Autónoma de Puebla, Mexico K. Monfil, Benemérita Universidad Autónoma de Puebla, Mexico A. Benítez, Benemérita Universidad Autónoma de Puebla, Mexico |
| Correspondent: | Click to Email |
Transparent conductive oxides (TCO) have become increasingly important in a large variety of applications due to demands as transparent and conductive materials. Applications of these devices include thin-film solar cells, display devices, optoelectronic devices, polymer-inorganic composite solar cells, gas sensors, and frost-resistant surfaces [1-4]. ITO is an n-type semiconductor where indium oxide (In2O3) has been doped with tin oxide in order to improve many of the material’s properties, including its electrical conductivity [5]. Also, FTO is an ideal candidate for applications requiring TCO due to its ability to adhere strongly to glass, resistance to physical abrasion, chemical stability, high optical visible transparency, and electrical conductivity. FTO is frequently used as an alternative to ITO when chemical and electrical stability at elevated temperatures is required for device fabrication or application. FTO is more thermally stable because it does not depend on oxygen vacancies to provide charge carriers. As a result, when exposed to elevated temperatures, FTO does not experience the characteristic decrease in conductivity seen in the ITO system. Therefore, as device size continues to decrease, the potential use of nanoscaled structures of these TCOs grows, and a study for these TCO´s is necessary. In this work, Spray pyrolysis automatized technique was used to deposit FTO and ITO films on glass corning. This technique allows us to obtain a better control on thin FTO and ITO films, with different properties just by varying the concentration of the fluorine. The structural and optical properties of the FTO and ITO films were obtained using X-ray Diffraction and scanning electronic microscopy, photoluminescence (PL), Transmittance and perfilometer. The diffractograms shows the presence of preferential planes of the FTO and ITO. SEM images showed the formation of different agglomerates. All films showed different intensities PL and transmittance spectra showed a wavelength shift of the absorption border. With Hall Effect we obtain some electrical properties.
Acknowledgements: This work has been partially supported by CONACyT-154725 and VIEP-BUAP-2013.