| AVS 59th Annual International Symposium and Exhibition | |
| Nanomanufacturing Science and Technology Focus Topic | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | NM+NS+MS+EM-MoA1 From R&D Towards Industrial Atomic Layer Deposition: Challenges in Scaling up M. Putkonen, Beneq Oy, Finland |
| 2:20pm | NM+NS+MS+EM-MoA2 Invited Paper Enabling ALD for Semiconductor Manufacturing D. Chu, Applied Materials Inc. |
| 3:00pm | NM+NS+MS+EM-MoA4 Migration to ALD Techniques in the Semiconductor Industry: Pattern Effects, Microloading and Film Thickness Variability in Dielectric Thin Films Deposition M.P. Belyansky, IBM Semiconductor R&D Center |
| 3:40pm | NM+NS+MS+EM-MoA6 Interface Analysis of PEALD TaCN Deposited on HfO2 using Parallel Angle Resolved X-ray Photoelectron Spectroscopy for sub-20nm Gate Last CMOS Transistors F. Piallat, ST Microelectronics, France, V. Beugin, R. Gassilloud, P. Michallon, CEA Grenoble, France, L. Dussault, B. Pelissier, LTM - MINATEC - CEA/LETI, France, C. Leroux, CEA Grenoble, France, P. Caubet, ST Microelectronics, France, C. Vallée, LTM - MINATEC - CEA/LETI, France |
| 4:20pm | NM+NS+MS+EM-MoA8 Atmospheric Pressure Atomic Layer Deposition of Al2O3 using Trimethylaluminum and Ozone M.B. Mousa, D.H. Kim, C.J. Oldham, G.N. Parsons, North Carolina State University |
| 4:40pm | NM+NS+MS+EM-MoA9 An Industrial Solution for Surface Passivation of c-Si using AlOx Film Deposited by In-line Atmosphere Chemical Vapor Deposition K. Jiang, Gebr. Schmid GmbH + Co, Germany, K.O. Davis, University of Central Florida, C. Demberger, H. Zunft, H. Haverkamp, Gebr. Schmid GmbH + Co, Germany, W.V. Schoenfeld, University of Central Florida, D. Habermann, Gebr. Schmid GmbH + Co, Germany |
| 5:00pm | NM+NS+MS+EM-MoA10 Invited Paper Solution Based Processing of Floating Gate Memory using Additive-Driven Self-Assembly and Nanoimprint Lithography J. Watkins, University of Massachusetts |