AVS 58th Annual International Symposium and Exhibition, Session EM+TF-TuM

AVS 58th Annual International Symposium and Exhibition
Electronic Materials and Processing Division	Tuesday Sessions

Session EM+TF-TuM
High-k Dielectrics for MOSFETs Part 1

Tuesday, November 1, 2011, 8:00 am, Room 210
Moderator: Robert Wallace, University of Texas at Dallas

Click here to Download program book for this session
in Adobe Acrobat format

Click a paper to see the details. Presenters are shown in bold type.

8:20am	EM+TF-TuM2 In Situ TMA Pre-Treatment Study of GaAs and In_0.53Ga_0.47As Surfaces Barry Brennan, D.M. Zhernokletov, H. Dong, R.V. Galatage, J. Kim, E.M. Vogel, R.M. Wallace, University of Texas at Dallas
8:40am	EM+TF-TuM3 Half-cycle Atomic Layer Deposition Studies of HfO₂ on the GaSb(001) Surface Dmitry Zhernokletov, H. Dong, B. Brennan, J. Kim, R.M. Wallace, University of Texas at Dallas
9:00am	EM+TF-TuM4 Invited Paper Remote Phonon and Surface Roughness Limited Universal Electron Mobility of In_0.53Ga_0.47As Surface Channel MOSFETs Eric Vogel, A.M. Sonnet, R.V. Galatage, University of Texas at Dallas, P.K. Hurley, E. Pelucchi, K. Thomas, A. Gocalinska, Tyndall National Institute, J. Huang, N. Goel, G. Bersuker, SEMATECH, W.P. Kirk, C.L. Hinkle, University of Texas at Dallas
9:40am	EM+TF-TuM6 Structural Characterization of Ultra-thin High-k Gate Oxide Films through a Multi-technique Approach Eric Bersch, J.D. LaRose, I.B. Wells, University at Albany, S.P. Consiglio, R.D. Clark, K.N. Tapily, G.J. Leusink, TEL Technology Center, America, LLC, A.C. Diebold, University at Albany
10:40am	EM+TF-TuM9 Invited Paper Research Advances on III-V and Ge MOS/MOSFETs Beyond Si CMOS T.D. Lin, M.L. Huang, Y.C. Chang, W.C. Lee, National Tsing Hua University, Taiwan, Republic of China, T.W. Pi, National Synchrotron Radiation Research Center, Taiwan, Republic of China, J. Kwo, National Tsing Hua Univ. and National Taiwan Univ., Taiwan, Republic of China, Minghwei Hong, National Tsing Hua University, Taiwan, Republic of China
11:20am	EM+TF-TuM11 SiO₂ Interlayer Thickness Dependence of the Density and Polarity of Charges in Si/SiO₂/Al₂O₃ stacks Nick Terlinden, G. Dingemans, M.M. Mandoc, M.C.M. van de Sanden, W.M.M. Kessels, Eindhoven University of Technology, Netherlands
11:40am	EM+TF-TuM12 Study of the Interface Barrier of Atomic Layer Deposited (ALD) Al₂O₃ on GaN M. Esposto, S. Krishnamoorthy, D.N. Nath, S. Bajaj, S. Rajan, Ting-Hsiang Hung, Ohio State University