| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Tuesday Sessions |
| Session EM+TF-TuM |
| Session: | High-k Dielectrics for MOSFETs Part 1 |
| Presenter: | Dmitry Zhernokletov, University of Texas at Dallas |
| Authors: | D.M. Zhernokletov, University of Texas at Dallas H. Dong, University of Texas at Dallas B. Brennan, University of Texas at Dallas J. Kim, University of Texas at Dallas R.M. Wallace, University of Texas at Dallas |
| Correspondent: | Click to Email |
Since GaSb(001) is a candidate surface channel material for p-MOSFET and an interfacial passivation layer for buried channel quantum well and tunneling FETs (GaSb static dielectric constant of ~ 16), it is necessary to understand its interface with high-κ dielectric materials which would act as gate dielectrics in these devices[1]. An in-situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (ALD/XPS) study is conducted in order to investigate the evolution of the HfO2 dielectric interface with the GaSb(001) surface after sulfur passivation procedures and HCl etching designed to removed the native oxides. Monochromatic XPS is used to examine the surfaces following the various surface treatments and then without breaking vacuum, after each individual ALD pulse of tetrakis-dimethyl-amino-hafnium (TDMA-Hf) and deionized water (DIW) precursors (i.e. single TDMA-Hf pulse/XPS scan; single DIW/XPS scan; etc.) for two full cycles and finally after 1 nm of HfO2 deposition to determine whether there is any “clean up” effect of the native oxides due to the ALD process. The various surface preparation techniques are compared to determine which is more effective at minimizing native oxides. The behavior of the sulfides and the effect of HCl surface cleaning procedure upon HfO2 deposition are discussed as well as a comparison to previous results from half cycle Al2O3 deposition on GaSb [2]. This work is supported by the Semiconductor Research Corporation FCRP MSD Focus Center, the Nanoelectronics Research Initiative and the National Institute of Standards and Technology through the Midwest Institute for Nanoelectronics Discovery (MIND). and the NSF (ECCS-0925844).
[1] A. Nainani, T. Irisawa, Z. Yuan, Y.Sun, T. Krishnamohan, M. Reason, B.R. Bennett, J.B. Boos, M. Ancona, Y. Nishi, K.C. Saraswat, International Electron Devices Meeting, (IEDM) Tech. Dig. (2010).
[2] S. McDonnell, D. M. Zhernokletov, A. P. Kirk, J. Kim, and R. M. Wallace. Applied Surface Science Letters, submitted (2011).