AVS 58th Annual International Symposium and Exhibition
    Thin Film Division Thursday Sessions
       Session TF2-ThM

Paper TF2-ThM6
Hard, yet Tough, Transition Metal Nitride Thin Films by Alloying and Valence Electron Concentration Tuning

Thursday, November 3, 2011, 9:40 am, Room 110

Session: Modeling and Analysis of Thin Films
Presenter: Davide Sangiovanni, Linkoping University, Sweden
Authors: D.G. Sangiovanni, Linkoping University, Sweden
V. Chirita, Linkoping University, Sweden
L. Hultman, Linkoping University, Sweden
Correspondent: Click to Email

Improved toughness in hard and superhard thin films is a primary requirement for present day ceramic hard coatings, known to be prone to brittle failure during in-use conditions, in modern applications. Based on the successful approach and results obtained for TiN- and VN-based ternary thin films [1,2], we expand our Density Functional Theory (DFT) investigations to TiAlN-based quarternary thin films. (TiAl)1-xMxN thin films in the B1 structure, with 0.06 ≤ x ≤ 0.75, are obtained by alloying with M = V, Nb, Ta, Mo and W, and results show significant ductility enhancements, hence increased toughness, in these compounds. Importantly, these thin films are also predicted to be hard/superhard, with similar and/or increased hardness values, compared to TiAlN. For (TiAl)1-xWxN these results have experimentally been confirmed recently [3]. As previously demonstrated [1], the ductility increase originates in the enhanced occupancy of d-t2g metallic states, induced by the valence electrons of substitutional elements (V, Nb, Ta, Mo, W). This effect is more pronounced with increasing valence electron concentration (VEC), and, upon shearing, leads to the formation of a layered electronic structure, consisting of alternating layers of high and low charge density in the metallic sublattice. This, in turn, allows a selective response to tetragonal and trigonal deformation: if compressive/tensile stresses are applied, the structure responds in a “hard” manner by resisting deformation, while upon the application of shear stresses, the layered electronic arrangement is formed, bonding is changed accordingly, and the structure responds in a “ductile/tough” manner as dislocation glide along the {110}<1-10> slip system becomes energetically favored [2].
[1] D. G. Sangiovanni et. al. Phys. Rev. B 81 (2010) 104107.
[2] D. G. Sangiovanni et. al. Acta Mater. 59 (2011) 2121.
 [3] T. Reeswinkel et. al. Surf. Coat. Technol. (2011) in press.