Invited Paper NM+MN+MS+TF-TuM5
Directed Assembly of Block Copolymers to Advance the Performance of Conventional Lithography

Tuesday, November 1, 2011, 9:20 am, Room 207

Our research program aims to integrate self-assembling block copolymers into current manufacturing practice. The fundamental concepts of the approach are that 1) the most advanced production-oriented exposure tools (e.g. 193 nm, EUV, or electron beam lithography) and resist materials are used to create patterns of differing chemical functionality on the substrate, and 2) films of block copolymers can be directed to assemble in the presence of the chemical pattern into predictable and desirable morphologies, thereby augmenting and enhancing the lithographic process. In comparing the pattern in resist to the pattern of domains induced to assemble in the block copolymer film, directed assembly has been demonstrated to achieve high degrees of pattern perfection, placement of features at the precision of the lithographic tool used to make the chemical pattern, improved dimensional control of features, improved line edge and line width roughness, and resolution enhancement by factors of two to four. In addition, the approach has been demonstrated to robustly achieve non-regular device-oriented geometries used in the fabrication of integrated circuits also with resolution enhancement by multiplication of feature density by interpolation on low duty cycle chemical patterns. After describing current capabilities, remaining technological questions and pathways towards implementation in specific applications will be discussed.