AVS 58th Annual International Symposium and Exhibition
    Helium Ion Microscopy Focus Topic Tuesday Sessions
       Session HI+AS-TuA

Invited Paper HI+AS-TuA1
Principles of Helium Ion Microscopy

Tuesday, November 1, 2011, 2:00 pm, Room 106

Session: Basics of Helium Ion Microscopy
Presenter: John Notte, Carl Zeiss NTS
Authors: J.A. Notte, Carl Zeiss NTS
L. Scipioni, Carl Zeiss NTS
L.A. Stern, Carl Zeiss NTS
Correspondent: Click to Email

The Helium Ion Microscope (HIM) consists of an interesting blend of long established technologies and recent state of the art engineering designs that enable superior charged particle scanning microscopy capabilities. They are capable of providing sub-nanometer spatial resolution with remarkable surface information and a unique ability to image insulating samples. HIMs share many similarities with Scanning Electron Microscopes (SEMs), but also embody new principles that uniquely differentiate HIM hardware and applications from traditional SEMs.

The most significant hardware difference of the HIM compared to SEM is the ion source. On the macroscopic scale the source appears very similar to a standard electron field emission source. However, the detailed tip geometry allows for much higher electric fields to be produced in the vicinity of the tip than what is found in traditional SEM field emission sources. The higher field enables ionization of the neutral helium gas which surrounds the tip, producing the needed helium ion beam. In addition to the high electric field requirement, it is necessary to keep the tip and surrounding imaging gas at cryogenic temperatures. The implementation of source cryogenics while operating the tip at ~ 35 keV, and also maintaining mechanical motion for both source translation and tilting, introduces significant engineering challenges in the design of a HIM.

Due to fundamental differences between helium ion and electron interactions with the sample under observation, the HIM is capable of producing images that are significantly different from those produced by traditional SEM. Since the entire electron population created due to an incident helium ion is of very low energy, only those electrons near the point of helium incidence are capable of escaping from the sample, resulting in images that are rich with surface information and possess superior spatial resolution. Due to the much higher secondary electron yield associated with helium bombardment of a sample relative to electron bombardment, and the fact that the incoming particles are positively charged, the net charge state of the sample is always positive, unlike the SEM case. Furthermore, due to the strong affinity of a helium ion to capture an electron, the net charge on the sample always exists as a surface charge. The positive surface charge can be easily neutralized with an electron flood gun, thus enabling charge free imaging on highly insulating samples. These various unique imaging principles make the HIM a versatile and unique imaging instrument.