| AVS 58th Annual International Symposium and Exhibition | |
| Energy Frontiers Focus Topic | Monday Sessions |
| Session EN+PS-MoM |
| Session: | Plasmas for Photovoltaics & Energy Applications |
| Presenter: | Sung-Suk Wi, Pusan National University, Republic of Korea |
| Authors: | S.-S. Wi, Pusan National University, Republic of Korea Y.-G. Kim, Pusan National University, Republic of Korea H.-J. Lee, Pusan National University, Republic of Korea D. Kim, LG Electronics, Republic of Korea D. Hwang, LG Electronics, Republic of Korea W.S. Chang, LG Electronics, Republic of Korea |
| Correspondent: | Click to Email |
We presents the characteristics of hydrogenated microcrystalline silicon thin films deposited from SiH4/H2 in 40 MHz plasma enhanced chemical vapor deposition (PECVD)equipped with multi-hole-array showerhead. The effects of hole array structure are analyzed in terms of their diameter and depth. Cross dependences between the hole structure and process parameters, such as SiH4 concentration, rf power, pressure, substrate temperature and total gas flow rate, are also investigated. The results show that deposition rate is not a strong function of hole structure compared with other process parameters. However, it is found that uniformity can be controlled by varying the surface density of hole array. With decreasing total flow rate, faster increase in deposition rate is found at the multi-hole array compared with flat electrode. This may be attributed to the high electron density and longer residence time of within the holes. It is demonstrate that the multi hole array electrode can be used as an effective control variable for optimization of Si thin film solar cell PECVD process.