| AVS 58th Annual International Symposium and Exhibition | |
| Electronic Materials and Processing Division | Monday Sessions |
| Session EM-MoM |
| Session: | Dielectrics for Novel Devices and Process Integration |
| Presenter: | Alan Seabaugh, University of Notre Dame |
| Authors: | A. Seabaugh, University of Notre Dame S.-D. Chae, University of Notre Dame P. Fay, University of Notre Dame W.-S. Hwang, University of Notre Dame T. Kosel, University of Notre Dame R. Li, University of Notre Dame Q. Liu, University of Notre Dame Y. Lu, University of Notre Dame T. Vasen, University of Notre Dame M. Wistey, University of Notre Dame H. Xing, University of Notre Dame G. Zhou, University of Notre Dame Q. Zhang, University of Notre Dame R.M. Wallace, University of Texas at Dallas |
| Correspondent: | Click to Email |
Tunnel field-effect transistor (TFETs) are metal-oxide semiconductor (MOS) devices that use the gate electrode to control the band-overlap of a Zener tunnel junction. In TFETs, the subthreshold swing can be less than the thermal limit of 60 mV/decade in MOSFETs, allowing lower supply voltages for the same on/off current ratio, and lower power dissipation. Traps, however, at the high-k-dielectric/semiconductor interface act to terminate the gate field without contributing charge carriers to the channel and thereby degrade the subthreshold swing. This presentation will examine the relationship between interface traps and subthreshold swing and show, through impedance and transport measurements on InAs/AlGaSb TFETs, our current understanding of the interface, physics, charge control, and channel transport.