| AVS 58th Annual International Symposium and Exhibition | |
| Spectroscopic Ellipsometry Focus Topic | Thursday Sessions |
| Session EL-ThP |
| Session: | Spectroscopic Ellipsometry Poster Session |
| Presenter: | Chad Briley, University of Nebraska - Lincoln |
| Authors: | E.A. Montgomery, University of Nebraska - Lincoln T.E. Tiwald, J.A. Woollam Co., Inc. E. Schubert, University of Nebraska - Lincoln M. Schubert, University of Nebraska - Lincoln C. Beasley, Gamry Instruments C. Briley, University of Nebraska - Lincoln |
| Correspondent: | Click to Email |
Electrochemical oxidation of silicon (n-type) at room temperature in a mixture of ethylene glycol, water and potassium nitrate has been performed by applying constant current densities to prepare thin SiO2 layers. In-situ Electrochemical Impedance Spectroscopy (EIS) and Spectroscopic Ellipsometry (SE) are employed during the SiO2 film growth. Using EIS and SE techniques in-situ one is able to monitor the capacitive changes and also the film thickness change of the oxide. The thickness of the oxides is also measured ex-situ before and after growth using SE. Equivalent circuit models corresponding to the electrolyte-oxide-silicon interfaces and optical models are fit to EIS and SE data respectively, to gain insight into the quality of the anodically grown SiO2.