AVS 58th Annual International Symposium and Exhibition
    Spectroscopic Ellipsometry Focus Topic Thursday Sessions
       Session EL+AS+EM+MS+PS+TF-ThM

Paper EL+AS+EM+MS+PS+TF-ThM9
Contamination Processes of EUV Optics Characterized by Spectroscopic Ellipsometry

Thursday, November 3, 2011, 10:40 am, Room 209

Session: Spectroscopic Ellipsometry of Biological Materials and Organic Films
Presenter: Lee Richter, National Institute of Standards and Technology
Authors: L.J. Richter, National Institute of Standards and Technology
C. Tarrio, National Institute of Standards and Technology
S. Grantham, National Institute of Standards and Technology
S.B. Hill, National Institute of Standards and Technology
T.B. Lucatorto, National Institute of Standards and Technology
N.S. Faradzhev, University of Virginia
Correspondent: Click to Email

Extreme ultraviolet (EUV) lithography using 13.5 nm light is emerging as a viable tool for semiconductor fabrication at design rules below 32 nm. Tool performance critically depends on limiting and mitigating degradation of the EUV optical elements. A primary degradation mechanism is the EUV induced deposition of carbon from ambient species originating from outgassing of the unbaked vacuum system and/or outgassing from the EUV irradiation of the resist. Using the high brightness of the Synchrotron Ultraviolet Radiation Facility (SURF-III) at NIST both fundamental studies of EUV induced contamination and practical (“witness plate”) studies of resist out gassing are performed. Typical deposits are hydrogenated amorphous carbon features with peak thicknesses of about 1 nm and nominal lateral extent of 1 mm. Both ex-situ, small spot mapping spectroscopic ellipsometry (SE) and in situ single-wavelength imaging nulling-ellipsometry are used for rapid, sensitive, contamination metrology. Fundamental studies of contamination by admitted gases indicate that the process is a complex function of both gas pressure and photon dose. Correlations between SE and XPS are suggestive that, at high EUV fluxes, densification can occur resulting in spatial variation in the deposit dielectric function. The use of principal component analysis of the SE images to highlight the spatial diversity will be discussed.