AVS 58th Annual International Symposium and Exhibition
    Applied Surface Science Division Tuesday Sessions
       Session AS-TuP

Paper AS-TuP24
Characterization of AlxGa1-xN Thin Film Light Emitting Diode (LED) Device by Spectroscopic Ellipsometry

Tuesday, November 1, 2011, 6:00 pm, Room East Exhibit Hall

Session: Applied Surface Science Poster Session
Presenter: Li Yan, HORIBA Scientific
Authors: K. Uppireddi, HORIBA Scientific
L. Yan, HORIBA Scientific
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The demand for efficient energy usage for lighting at industry viable production costs catalyzing the rapid growth of global LED market. LED lighting is widely in use from LED-backlit TVs to solid-state lighting. The wall-plug efficiency, which characterizate its performance depends on the design and material properties of thin film LED structure. The accurate determination of thickness and composition of the well and barrier layers is desired for quality control in the production. The Sapphire/AlN/AlxGa1-xN structure was characterized using a phase modulated spectroscopic ellipsometer (PMSE) at an angle of incidence of 70 degree across the spectral range 0.6-6.5 eV. Using a three layer structure we accurately modeled the thickness of the layers in the spectral range from 0.6 to 4.5 eV and AlxGa1-xN optical constants. The PMSE delivers both unique performance and proven reliability for on-line quality control of production process.