AVS 58th Annual International Symposium and Exhibition
    Actinides and Rare Earths Focus Topic Thursday Sessions
       Session AC+SS-ThM

Paper AC+SS-ThM11
Growth and Characterization of Scandia Stabilized Zirconia and Samaria Doped Ceria Multi-Layer Thin Films

Thursday, November 3, 2011, 11:20 am, Room 207

Session: The Surface Science of Actinides and Rare Earths
Presenter: Manjula Nandasiri, Western Michigan University
Authors: S. Thevuthasan, Pacific Northwest National Laboratory
M.I. Nandasiri, Western Michigan University
T. Varga, Pacific Northwest National Laboratory
V. Shutthanandan, Pacific Northwest National Laboratory
S.P. Sanghavi, Pacific Northwest National Laboratory
S.V.N.T. Kuchibhatla, Pacific Northwest National Laboratory
A. Kayani, Western Michigan University
Correspondent: Click to Email

Recent studies showed a colossal enhancement in the ionic conductivity of multi-layer oxygen-ion conducting thin films compared to most commonly used solid oxide fuel cell (SOFC) electrolytes. It has been observed that, the oxygen ionic conductivity of nano-scale hetero-structures increases with the increase in number of layers. However, some of these findings were questioned due to the inability to distinguish electronic and ionic conductivity. Thus, here we investigated the scandia stabilized zirconia and samaria doped ceria (SDC/ScSZ) multi-layer system to understand the oxygen-ion conductance in multi-layer hetero-structures.

In this study, the growth of SDC and ScSZ multi-layer thin films was carried out using the optimized growth conditions, dopant concentrations and film properties established for single- layer SDC and ScSZ epitaxial thin films. The epitaxial SDC and ScSZ multi-layer thin films were grown on Al2O3(0001) substrates by oxygen plasma-assisted molecular beam epitaxy (OPA-MBE) at 650°C. The number of layers in the multi-layer hetero-structures was varied from 2 to 20 by keeping the total film thickness constant at 140 nm. Following the growth, thin films were characterized by various in-situ and ex-situ characterization techniques including reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and x-ray photoelectron spectroscopy (XPS). The initial streaky RHEED pattern indicates the epitaxial growth of SDC/ScSZ multi-layer thin films. Furthermore, RHEED patterns indicate the transition of the initial smooth surface to a rough surface with the increase in number of layers. The individual layer thickness was found to be approximately 7 nm for the twenty-layer film as confirmed by x-ray reflectivity data. RBS was also used to find the composition and thickness of the films. HRXRD patterns of ScSZ/SDC thin films exhibit only CeO2(111) and ZrO2(111) reflections, indicating the growth of epitaxial SDC(111) and ScSZ(111) multi-layers. XPS depth profile confirmed the uniform dopant concentration in both SDC and ScSZ layers, which was found to be 7 and 6 atom % for Sc and Sm, respectively. In the near future, the ionic conductivity of SDC and ScSZ multi-layer thin films will be measured by four probe conductivity method.