| AVS 57th International Symposium & Exhibition | |
| Applied Surface Science | Tuesday Sessions |
| Session AS-TuP |
| Session: | Applied Surface Science Poster Session |
| Presenter: | K.G. Lloyd, DuPont Corporate Center for Analytical Sciences |
| Authors: | K.G. Lloyd, DuPont Corporate Center for Analytical Sciences L. Zhang, DuPont Corporate Center for Analytical Sciences J.P. Wyre, DuPont Corporate Center for Analytical Sciences J.R. Marsh, DuPont Corporate Center for Analytical Sciences M.A. Plummer, DuPont Corporate Center for Analytical Sciences |
| Correspondent: | Click to Email |
Thin multi-layered structures form the basis for photovoltaic/solar cells, OLED displays, and many other electronic devices. Electrical performance can be influenced by the thickness of these layers, the widths of interfaces between layers and/or development of interfacial chemistry, and the extent and location of dopants within layers. Depth profiling, i.e., obtaining chemical information as a function of dpeth, can provide this information, especially for systems wehre cross-sectioning is not an option, species of interest are present below 1%, or sampling with better than 1 micron depth resolution is required.
ToF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) and X-ray Photoelectron Spectroscopy (XPS, a.k.a. ESCA) are typically used in conjunction with a high-current ion sputter beam to analyze the outermost surfaces as they are freshly revealed. ToF-SIMS depth profiling offers high mass resolution, spatially-resolved chemical information, and the collection of the entire mass spectrum at each depth interval. The combination of ToF-SIMS depth profiling and multivariate methods of data analysis allows better definition and characterization of interfacial regions between layers.
Examples include characterization of the BSF (back surface field) layer on solar cell backsides, monitoring layered oxide growth on annealed stainless steels, and study of interdiffusion in organic electronic layered structures.