| AVS 56th International Symposium & Exhibition | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1-MoM1 Invited Paper Modification Mechanisms of Porous Low-k SiOCH Film during Plasma Ashing Processes K. Kurihara, T. Imamura, K. Yamamoto, H. Hayashi, Y. Nakasaki, Toshiba Corp., Japan |
| 9:00am | PS1-MoM3 Oxygen Plasma and Radical Interactions with Ultralow-K Organosilicates; Fundamental Damage Mechanisms J. Kelber, S. Behera, S. Manandhar, S. Gaddam, University of North Texas |
| 9:20am | PS1-MoM4 Synergistic Damage Effects of Vacuum Ultraviolet Photons and O2 in SiCOH Ultra-Low-k Dielectric Films J. Lee, D.B. Graves, University of California-Berkeley |
| 9:40am | PS1-MoM5 Sidewall Modification of Porous SiOCH Ultra Low k Materials Induced by Reducing and Oxidizing Post Etching Plasma Treatments R. Bouyssou, T. Chevolleau, CNRS-LTM, FRANCE, N. Posseme, T. David, Ch. Licitra, CEA-LETI-MINATEC, France, A. Ostrowsky, C. Verove, STMicroelectronics, France, O. Joubert, CNRS-LTM, France |
| 10:00am | PS1-MoM6 Reaction Mechanism and Profile Evolution for Porous Low-k Dielectric Sealing by Combined He and NH3 Plasma Treatment J. Shoeb, Iowa State University, M.J. Kushner, University of Michigan |
| 10:40am | PS1-MoM8 Materials Interactions as a Challenge for BEOL RIE at 22nm Node and Beyond Y. Yin, J.C. Arnold, IBM, K. Zin, C. Chu, Y. Feurprier, Tokyo Electron Limited, Japan, Y. Mignot, STMicroelectrics, M. Sankarapandian, J. Chen, X. Liu, IBM |
| 11:00am | PS1-MoM9 Challenges in Porous Ultra Low-k for 22nm Dual Damascene Trench Etch Q. Zhou, R. Patz, A. Darlak, J. Pender, M. Armacost, Applied Materials, Inc., C. Labelle, GLOBALFOUNDRIES, D. Horak, IBM Research |
| 11:20am | PS1-MoM10 Sidewall Roughness Transfer during Advanced Interconnect Patterning: Impact of Masking Strategies and Plasma Etching Processes J. Ducote, STMicroelectronics, France, T. David, N. Posseme, CEA-LETI-MINATEC, France, T. Chevolleau, LTM-CNRS, France, A. Ostrovsky, STMicroelectronics, France, M. Guillermet, CEA-LETI-Minatec, France, F. Bailly, STMicroelectronics, France, E. Pargon, R. Inglebert, LTM-CNRS, France, C. Verove, STMicroelectronics, France, O. Joubert, LTM-CNRS, France |
| 11:40am | PS1-MoM11 Post Etch Treatments as Solution to Limit or Prevent Residue Growth on Metallic Hard Mask after Porous SiOCH Etching in Fluorocarbon Based Plasma N. Posseme, CEA-LETI-MINATEC, France, R. Bouyssou, T. Chevolleau, LTM-CNRS, France, T. David, CEA-LETI-MINATEC, France, V. Arnal, C. Verove, STMicroelectronics, France, O. Joubert, LTM-CNRS, France |