AVS 56th International Symposium & Exhibition
    Vacuum Technology Wednesday Sessions
       Session VT-WeM

Paper VT-WeM3
Collimated Gas Beam Analysis for Atomic Layer Epitaxy of Cracked Disilane

Wednesday, November 11, 2009, 8:40 am, Room J1

Session: Partical and Theoretical Aspects of Gas Dynamics
Presenter: W.P. Kirk, University of Texas at Dallas
Authors: M.P. Nadesalingam, University of Texas at Dallas
M. Kanouff, Sandia National Laboratories
J. Randall, Zyvex Labs
R.M. Wallace, University of Texas at Dallas
W.P. Kirk, University of Texas at Dallas
Correspondent: Click to Email

The application of collimated gas beams has enjoyed a central role in many atomic and molecular beam experiments of the past, and is again proving to be important for the development of tip based nanofabrication of new devices such as quantum dots, qubits, NEMS oscillators and biomedical devices. We report the analysis of the molecular flux from micro-capillary array dosers for atomic layer epitaxy experiments of cracked disilane. The spatial distribution as well as the total flux can be important parameters for experiments and fabrication processes. Both analytic and numeric analyses have been performed and show values that differ in some aspects from the early results of Winkler and Yates.1 At high acceptance angles where the target is closer to the source, the flux is found to be greater than the previous results by approximately 10 to 15% for various ratios of source to target diameters. The consequences of our results for atomically precise manufacturing of nanometer scale structures will be discussed.2
 
References
1. A. Winkler and J. T. Yates, Jr., J. Vac. Sci. Technol. A 6 (5), 2929 (1988).
2. This material is based upon work supported by the Defense Advanced Research Project Agency (DARPA) and Space and Naval Warfare Center, San Diego (SPAWARSYSCEN-SD) under contract N66001-08-C-2040. It is also supported by a grant from the Emerging Technology Fund of the State of Texas to the Atomically Precise Manufacturing Consortium.