AVS 56th International Symposium & Exhibition
    Thin Film Friday Sessions
       Session TF-FrM

Paper TF-FrM5
Permittivity-Engineered TCOs Studied by In Situ Spectroscopic Ellipsometry

Friday, November 13, 2009, 9:40 am, Room B4

Session: Transparent Electronic Materials and Applications
Presenter: J. Burst, National Renewable Energy Laboratory
Authors: J. Burst, National Renewable Energy Laboratory
T.J. Peshek, Arizona State University and National Renewable Energy Laboratory
X. Li, National Renewable Energy Laboratory
T.A. Gessert, National Renewable Energy Laboratory
D.H. Levi, National Renewable Energy Laboratory
B.R. Rogers, Vanderbilt University
S. Weiss, Vanderbilt University
Correspondent: Click to Email
Recently, Gessert et al have reported on improved infrared optical transmittance of indium oxide-based transparent conductive oxides (TCOs) by addition of zirconia [1]. Their results show that zirconia addition allows for deposition conditions with a wider range of oxygen partial pressures while maintaining suitable optical performance. Here we report on our real-time spectroscopic ellipsometry (SE) sputter deposition studies of permittivity-engineered TCOs. In situ ellipsometry gives information on the growth dynamics and optical functions during film deposition. We map out the phase space of this system with regard to temperature, partial pressure of oxygen and zirconia content. Temperature-dependent Hall measurements indicate a critical point at which the films are non-degenerate. We further correlate the optical and electrical data with structural and compositional analysis.

[1] T.A. Gessert, Y. Yoshida, C.C. Fesemaier, and T.J. Coutts, J. Appl. Phys., 105 (2009).