AVS 56th International Symposium & Exhibition
    Plasma Science and Technology Monday Sessions
       Session PS2+PV-MoM

Paper PS2+PV-MoM3
Production of Crystalline Si Nanoparticles for Third Generation Photovoltaics using a Multi-Hollow Discharge Plasma CVD Method

Monday, November 9, 2009, 9:00 am, Room A8

Session: Plasma Processing for Photovoltaics
Presenter: Y. Kawashima, Kyushu University, Japan
Authors: Y. Kawashima, Kyushu University, Japan
H. Sato, Kyushu University, Japan
K. Koga, Kyushu University, Japan
M. Shiratani, Kyushu University, Japan
M. Kondo, AIST, Japan
Correspondent: Click to Email

Novel solar cells employing multiple exciton generation (MEG) are attracting much attention as third generation solar cells of high efficiency above 20%. For the MEG, an energetic exciton is generated in a semiconductor nano-crystal by a high energy photon more than twice as large as the band gap of the nano-crystal. Subsequently, the energetic one produces another in the nano-crystal by the inverse Auger process [1]. An issue for realizing the MEG solar cells is production of size-controlled crystalline Si nanoparticles. We have produced crystalline Si nanoparticles of 1 nm in size using a multi-hollow discharge plasma CVD method [2]. For the multi-hollow discharge plasma CVD method, discharges are sustained in small hollows of 5 mm in diameter. Crystalline nanoparticles are nucleated and grow in the discharges of SiH4+H2 (>99.5%) and then they are transported to the downstream region by gas flow. Their size is limited up to a few nm in size due to a short gas residence time in hollows. Nanoparticles are collected by stainless mesh grids located at the downstream region. They are dispersed in methanol to measure their photoluminescence. The excitation laser wavelength is 244nm or 405nm. For 405nm light irradiation,the photoluminescence spectrum has a peak at 490nm (2.53eV), corresponding to the bandgap of the Si nanoparticles of 1 nm in size. For 244nm light irradiation, the spectrum has a 380nm (3.27eV) peak corresponding to recombination centers at their surface as well as a 484nm (2.56eV) peak corresponding to their bandgap. These experimental results demonstrate generation of excitons in the Si nanoparicles. Si nanoparticles produced may be applicable as a material for MEG solar cells. We also have measured absorption spectrum of Si nanoparticles dispersed in methanol. Si nanoparticles show stronger light absorption at the shorter wavelength (<250 nm). To realize MEG solar cells, fabricating nanoparticles of an optimaized size for MEG in large quantity is important.

[1] A.J.Nozik, Physica E 14, (2002)115.

[2] T. Kakeya, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Michio Kondo, The Solid Films, 506-507, (2006)288.