Invited Paper PS1-ThM3
Ultimate Top-down Processes for Future Nanoscale Devices - Novel Neutral Beam Process and Control of Atomic Layer Chemical Reaction
For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma etching, such as charge build-up and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10nm devices in practice, neutral-beam process has been proposed. In this paper, I introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. Namely, the neutral beam process can precisely control the atomic layer chemical reaction and defect generation. This technique is a promising candidate for the practical fabrication technology for future nanoscale devices.