AVS 56th International Symposium & Exhibition
    Manufacturing Science and Technology Thursday Sessions
       Session MS+GR+MI-ThM

Invited Paper MS+GR+MI-ThM3
Spin-Polarized Electrons in Silicon

Thursday, November 12, 2009, 8:40 am, Room C3

Session: Manufacturing Issues for Beyond CMOS Nanoelectronics
Presenter: B. Huang, University of Maryland
Authors: B. Huang, University of Maryland
I. Appelbaum, University of Maryland
Correspondent: Click to Email

In this talk, I will show how ballistic hot electron transport can be

used for spin injection and detection in silicon. With this technique,

we measure long conduction electron spin lifetimes which enable spin

transport in silicon over long distances (up to 2mm). I will also

discuss our investigations of spin dephasing and spin precession in

oblique magnetic fields, and show how we realized spin precession

control with an electric field.