| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-MoM1 Comparison Between Hybrid and Porous Dielectric Material (SiOCH) Integration Strategies for Interconnect Technologies J. Ducote, STMicroelectronics, France, T. David, N. Posseme, CEA-LETI-MINATEC, France, T. Chevolleau, CNRS-LTM, France, S. Gall, A. Zenasni, V. Jousseaume, CEA-LETI-MINATEC, France, R.-L. Inglebert, UJF-LTM, France, C. Verove, STMicroelectronics, France, O. Joubert, CNRS-LTM, France |
| 8:40am | PS-MoM2 Etching Characteristics of Low-k SiOCH Films by Fluorocarbon Beams: Molecular Dynamics Study A. Suzuki, M. Isobe, Osaka University, Japan, S. Kobayashi, M. Fukasawa, T. Tatsumi, Sony Corp., Japan, S. Hamaguchi, Osaka University, Japan |
| 9:00am | PS-MoM3 Invited Paper Plasma Challenges of Porous SiOCH Patterning for Advanced Interconnect Levels T. Chevolleau, CNRS/LTM France, T. David, N. Posseme, CEA/LETI/D2NT France, M. Darnon, CNRS/LTM France, F. Bailly, CEA/LETI/D2NT France, R. Bouyssou, CNRS/LTM France, J. Ducote, CEA/LETI/D2NT France, L. Vallier, O. Joubert, CNRS/LTM France |
| 9:40am | PS-MoM5 Plasma Damages on Organic Low-k Film due to VUV Radiation, UV Radiation, Radicals, Radicals with Radiation, and Ions in H2/N2 Plasma Etching Processes K. Takeda, S. Takashima, R. Saito, S. Uchida, Nagoya University, Japan, M. Fukasawa, K. Oshima, K. Nagahata, T. Tatsumi, Sony Corporation, Japan, M. Hori, Nagoya University and JST-CREST, Japan |
| 10:20am | PS-MoM7 Impact of Reducing and Oxidizing Post Etching Plasma Treatments on Porous SiOCH Integration R. Bouyssou, T. Chevolleau, CNRS-LTM, France, T. David, N. Posseme, CEA-LETI-MINATEC, France, J. Ducote, STMicroelectronics, France, L. Vallier, J. Joubert, CNRS-LTM, France |
| 10:40am | PS-MoM8 Effects of Plasma Etch and Ash Processes on Porous Low-k Film Surfaces in a Dual-Damascene Flow C.B. Labelle, Advanced Micro Devices, Inc., D. Horak, IBM Research, Y. Zhou, A. Li, K. Zhou, C. Zhang, R. Patz, A. Darlak, J. Pender, Applied Materials, Inc. |
| 11:00am | PS-MoM9 Mechanisms of Residue Formation on TiN Hard Mask after Patterning of Porous SiOCH Films in Fluorocarbon-Based Plasma N. Posseme, CEA-LETI, France, T. Chevolleau, R. Bouyssou, LTM-CNRS, France, T. David, CEA-LETI, France, V. Arnal, N. Jourdan, S. Doloy, C. Verove, ST Microelectronics, France, O. Joubert, LTM-CNRS, France |
| 11:20am | PS-MoM10 BEOL Pattern Flop Over as a Challenge to Shrink Feature Critical Dimension Continuously Y. Yin, J.C. Arnold, IBM Corporation, T. Sparks, Freescale Corporation, P. Basler, S. Schmitz, IBM Corporation |