AVS 55th International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions

Session EM-TuM
ZnO Materials and Devices

Tuesday, October 21, 2008, 8:00 am, Room 210
Moderator: J. Phillips, University of Michigan


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am EM-TuM1
Synchrotron-based X-ray Spectroscopy of Transparent Conducting Oxides: ZnO and CdO
L.F.J. Piper, A. DeMasi, K.E. Smith, Boston University, A.R.H. Preston, B.J. Ruck, Victoria University of Wellington, NZL, A. Schleife, F. Fuchs, F. Bechstedt, Friedrich-Schiller-Universität, Germany
8:20am EM-TuM2
Ultrahigh Vacuum Studies of Silane-Functionalized Nanocrystalline and Single Crystal Zinc Oxide
J. Singh, J. Im, J.E. Whitten, University of Massachusetts Lowell, J.W. Soares, D.M. Steeves, U.S. Army Natick Soldier Center
8:40am EM-TuM3
Factors Influencing the Formation of Schottky Contacts to Zinc Oxide
M.W. Allen, S.M. Durbin, University of Canterbury, New Zealand
9:00am EM-TuM4
Metal Contacts to Zn- and O- Polar Bulk ZnO Grown by Vapor-Phase Process
Y. Dong, L.J. Brillson, The Ohio State University, Z.Q. Fang, D.C. Look, Wright State University, D.R. Doutt, M.J. Hetzer, H.L. Mosbacker, The Ohio State University
9:20am EM-TuM5 Invited Paper
Surface and Interface Electronic Properties of Bulk and Epitaxial ZnO
C.F. McConville, T.D. Veal, P.D.C. King, S.A. Hatfield, University of Warwick, UK, B. Martel, CNRS, France, J. Chai, M.W. Allen, S.M. Durbin, Univ. of Canterbury, New Zealand, J. Zuniga-Perez, CNRS, France, V. Munoz-Sanjose, Valencia University, Spain
10:40am EM-TuM9
Control of Electrical Properties of Atomic Layer Deposition ZnO Channel Layer for Thin Film Transistor: In-Situ Nitrogen Doping and Post-deposition Ultra-violet Treatments
S.J. Lim, S. Kwon, H. Kim, POSTECH, Republic of Korea
11:20am EM-TuM11 Invited Paper
ZnO PEALD TFTs and Hybrid ZnO/Organic CMOS Circuits
T.N. Jackson, Penn State University