| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuM |
| Session: | ZnO Materials and Devices |
| Presenter: | L.F.J. Piper, Boston University |
| Authors: | L.F.J. Piper, Boston University A. DeMasi, Boston University K.E. Smith, Boston University A.R.H. Preston, Victoria University of Wellington, NZL B.J. Ruck, Victoria University of Wellington, NZL A. Schleife, Friedrich-Schiller-Universität, Germany F. Fuchs, Friedrich-Schiller-Universität, Germany F. Bechstedt, Friedrich-Schiller-Universität, Germany |
| Correspondent: | Click to Email |
Solids that combine electrical conductivity and optical transparency are essential for today’s flat-panel display and solar cell technologies. Post-transition-metal oxides (such as In2O3, ZnO and CdO), with their large band gaps (typically > 3 eV) and ability to sustain high concentrations of electrons with high mobility satisfy this condition. We present recent results from synchrotron-based resonant x-ray emission spectroscopy (RXES) of the O K-edge of ZnO [A. H. R. Preston et al., to be published (2008)] and CdO.[Piper et al., Phys. Rev. B 77, 125204 (2008)]. Bulk sensitive, “photon-in, photon-out” RXES - consisting of both x-ray absorption spectroscopy (XAS) and x-ray emission spectroscopy (XES) - is an alternative to conventional photoemission spectroscopy for examining the valence and conduction band structure of wide band gap semiconductors, such as ZnO. Direct comparisons between RXES spectra and quasiparticle band structure calculations within the GW approximation reveal excellent agreement for both ZnO and CdO.