| AVS 55th International Symposium & Exhibition | |
| Thin Film | Wednesday Sessions |
| Session TF-WeM |
| Session: | Chemical Vapor Deposition |
| Presenter: | D.J. Kim, University of Florida |
| Authors: | D.J. Kim, University of Florida O.H. Kim, University of Florida T.J. Anderson, University of Florida J. Koller, University of Florida L. McElwee-White, University of Florida C.L. Leu, University of Florida J.M. Tsai, University of Florida D.P. Norton, University of Florida |
| Correspondent: | Click to Email |
The tungsten piperidylhydrazido complex Cl4(CH3CN)W(NN(CH2)5) (designated as 1) was deposited by metal organic chemical vapor deposition (MOCVD) for growth of tungsten carbonitride (WNxCy) thin films in the temperature range 300 to 700 °C in the absence and presence of ammonia (NH3). The effect of deposition temperature and NH3 on the film microstructure, chemical composition, bonding states, growth rate, electrical resistivity, lattice parameter, and grain size were studied. The microstructure of films deposited with NH3 was amorphous below 500 °C and polycrystalline at and above this temperature. The chemical composition of films deposited with NH3 increased the nitrogen levels and decreased the carbon levels over the entire deposition temperature range as compared to films deposited without NH3. The XPS results indicate that W is primarily bonded to N and C for films deposited at 400 °C, but at lower deposition temperature the binding energy of the W-O bond becomes more evident. Growth rates of films deposited with NH3 varied from 0.6 to 4.2 Å/min. Diffusion barrier properties were investigated from Cu/WNxCy/Si stacks consisting of 100 nm Cu deposited at room temperature by reactive sputtering on a WNxCy film deposited at 400 °C by CVD. XRD patterns, AES compositional depth profiling, and cross-sectional TEM imaging were used to determine the performance of the diffusion barrier. Cu/WNxCy/Si stacks annealed at 500 °C for 30 min maintained the integrity of both Cu/WNxCy and WNxCy/Si interfaces. Hence, WNxCy thin films deposited at 400 °C are a viable material to serve as a Cu diffusion barrier to prevent interdiffusion and intermixing between Cu and Si. The film properties of thin films deposited with 1 and tungsten imido complexes Cl4(CH3CN)W(NR) (R = Ph, iPr, and allyl)1 were also compared to provide insight into the effect of hydrazido and imido ligands on film properties.
1 O. J. Bchir, K. M. Green, H. M. Ajmera, E. A. Zapp, T. J. Anderson, B. C. Brooks, L. L. Reitfort, D. H. Powell, K. A. Abboud, L. McElwee-White, J. Am. Chem. Soc. 127 (2005) 7825-7833.