| AVS 55th International Symposium & Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF-TuM |
| Session: | Applications of Atomic Layer Deposition |
| Presenter: | O.H. Kim, University of Florida |
| Authors: | O.H. Kim, University of Florida D.J. Kim, University of Florida T.J. Anderson, University of Florida |
| Correspondent: | Click to Email |
GaN films were grown on silicon substrates by atomic layer deposition (ALD) using GaCl3 and NH3. It is postulated that incomplete purging of GaCl3 for long GaCl3 exposure times allows gas phase formation of (Cl2GaNH2)n species with n=1-3,1 which results in higher chlorine content. X-ray photoelectron spectroscopy was used to determine N/Ga ratio in the film over exposure time, and showed a maximum N/Ga ratio in the saturation limit. Ab-initio calculations were implemented to understand the surface reactions in the saturation limit growth condition. Potential Energy Surface (PES) diagrams for the two adsorption reactions were used to explain the high N/Ga ratio in the ALD limit.
1 A. Kovács, Inorg. Chem. 2002, 41, 3067-3075.