AVS 55th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP9
Improvement of Tetra-Ethyl Ortho-Silicate Oxide - Chemical Mechanical Polishing Characteristics According to the Cerium Oxide Dispersion Time

Thursday, October 23, 2008, 6:00 pm, Room Hall D

Session: Aspects of Thin Films
Presenter: Y.K. Lee, Chosun University, Republic of Korea
Authors: Y.K. Lee, Chosun University, Republic of Korea
S.J. Han, Chosun University, Republic of Korea
S.W. Park, Chosun University, Republic of Korea
Y.J. Seo, Daebul University, Republic of Korea
W.S. Lee, Chosun University, Republic of Korea
Correspondent: Click to Email

CMP (chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO (cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, CeO2 abrasive was added de-ionized water (DIW) and pH control as a function of KOH contents. And then, we have discussed the CMP characteristics as a function of abrasive dispersion time. We have also investigated the possibility of CeO2 - mixed abrasive slurry for the oxide CMP application. Note: Requested a Poster Session.