| AVS 55th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films |
| Presenter: | S.J. Han, Chosun University, Republic of Korea |
| Authors: | S.J. Han, Chosun University, Republic of Korea Y.K. Lee, Chosun University, Republic of Korea S.W. Park, Chosun University, Republic of Korea Y.J. Seo, Daebul University, Republic of Korea W.S. Lee, Chosun University, Republic of Korea |
| Correspondent: | Click to Email |
In this paper, we have studied the chemical mechanical polishing (CMP) characteristics of mixed abrasive slurry (MAS) retreated by adding of ceria (CeO2) abrasives within 1:10 diluted silica slurry. The slurry designed for optimal performance should produce reasonable removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The modified abrasives in MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the viewpoint of high removal rate and low non-uniformity.