| AVS 55th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films |
| Presenter: | J.G. Quiñones Galván, CINVESTAV-IPN, Mexico |
| Authors: | J.G. Quiñones Galván, CINVESTAV-IPN, Mexico F. de Moure Flores, CINVESTAV-IPN, Mexico E. Mota Pineda, CINVESTAV-IPN, Mexico S. Cerón Gutiérrez, CINVESTAV-IPN, Mexico A. Hernández Hernández, Escuela Superior de Física Matemáticas-IPN, Mexico M. González Alcudia, CICATA-IPN Unidad Altamira, Mexico J.J. Araiza Ibarra, Universidad Autónoma de Zacatecas, Mexico M. Meléndez Lira, CINVESTAV-IPN, Mexico |
| Correspondent: | Click to Email |
SiGeC has been the subject of interest because of the possibility of control the stress associated to the deposit of SiGe/Si heterostructures but also for the possibility to modify the SiGe properties to produce light efficiently. However, the major problem to deposited this alloy in the whole range of compositions is the low solubility of carbon in SiGe. We present the results of the characterization of SiGeC alloys produced by the modified ablation laser technique in which the desired SiGeC alloy composition target is prepared by ball milling1. The target is prepared as a powder of the right composition and subject to the ablation process. Films of the Si1-x-yGexCy alloys were prepared with 0.1
1 M. González-Alcudia, A. Márquez-Herrera, M. Zapata-Torres, M. Meléndez-Lira and O. Calzadilla-Amaya, Adv. in Tech. of Mat. And Mat. Proc. J. 9, 81 (2007).