Paper TF-ThP30
Room Temperature Photoluminescence from CdTe Nanocrystals Embedded within a SiO₂ Matrix Deposited on Silicon Employing Reactive RF Sputtering

Thursday, October 23, 2008, 6:00 pm, Room Hall D

CdTe nanocrystals embedded in a SiO2 matrix were fabricated by radio frequency sputtering employing the texture of a SiO2 layer as template. The SiO2 film texture was controlled through the partial pressure of O2 (OPP) in the working atmosphere. The CdTe crystallinity is better for the samples synthesized on the rougher SiO2 films. Room temperature photoluminescence spectra showed a signal at 1.74 eV, related to the CdTe nanoparticles, for the samples that shown better crystallinity. Additional photoluminescence signals at 1.65 eV and 1.68 eV could indicate recombination process at the nanoparticles/matrix interface. These results indicate that the employed methodology allows to obtain room temperature light emitting CdTe nanoparticles in a single step. After thermal annealing all samples presented light emission related to quantum confinement; the photoluminescence emission can be controlled from 1.69 eV to 2.15 eV by an appropriate adjust of the OPP.