Paper TF-ThP3
Influence of Re-Deposition on Particle Generation

Thursday, October 23, 2008, 6:00 pm, Room Hall D

In physical vapor deposition (PVD), depending on the target material, target design and sputtering conditions, the bombarded atoms may re-deposit on to the lower erosion zone of the sputtered target. Due to difference in structure between the sputtering target and re-deposited layer, flaking may occur mainly induced by mismatch of coefficient of thermal expansion, resulting in particles generation and causing defects on substrate. Micro-arcing at the tip of re-deposited nodules is another potential particle source in target sputtering. In this report, re-deposition of many materials used for the semiconductor devices, such as Cu, Ti, Ta, W, WTi, W-Silicide and Cr, were discussed. Direct and indirect evidences of flaking and micro-arcing acting as particle sources to substrate are also presented in this report.