| AVS 55th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films |
| Presenter: | M. González-Alcudia, CICATA-IPN, México |
| Authors: | M. González-Alcudia, CICATA-IPN, México M. Meléndez-Lira, CINVESTAV-IPN, México O. Calzadilla-Amaya, Universidad Habana, Cuba M. Zapata-Torres, CICATA-IPN, México |
| Correspondent: | Click to Email |
This research seeks to develop improved and innovative growth technique ( pulsed laser deposition modified: PLD-M ) for growing thin films based on III-V elements, such as Si and Ge, or II-VI elements, such CdS, CdTe and Tellurides. In addition, on advanced semiconductor alloy combinations such as CdTe/PbSnTe or other promising materials. Compared them with conventional growth of pulsed laser deposition for films, concerning microstructural properties. Films with different droplets morphology could be obtained under mild conditions. The films were characterized by X-ray diffraction (XRD) and SEM. The radius of droplets formed during single pulse irradiation is the rKH ≈ 0.05 - 5 μm. Our experiment shows that source materials and reaction temperature play important roles in forming the objecive products and controlling their morphologies. By this method, it is possible to prepare at low temperature, films with good chemical homogeneity.